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  • 型号: SFH 213 FA
  • 制造商: OSRAM SYLVANIA
  • 库位|库存: xxxx|xxxx
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SFH 213 FA产品简介:

ICGOO电子元器件商城为您提供SFH 213 FA由OSRAM SYLVANIA设计生产,在icgoo商城现货销售,并且可以通过原厂、代理商等渠道进行代购。 SFH 213 FA价格参考¥242.37-¥271.09。OSRAM SYLVANIASFH 213 FA封装/规格:光学传感器 - 光电二极管, Photodiode 900nm 5ns 20° Radial。您可以下载SFH 213 FA参考资料、Datasheet数据手册功能说明书,资料中有SFH 213 FA 详细功能的应用电路图电压和使用方法及教程。

产品参数 图文手册 常见问题
参数 数值
产品目录

传感器,变送器

描述

PHOTODIODE 5MM 900NM光电二极管 PHOTODIODE

产品分类

光学传感器 - 光电二极管

品牌

OSRAM Opto Semiconductors

产品手册

点击此处下载产品Datasheet

产品图片

rohs

符合RoHS无铅 / 符合限制有害物质指令(RoHS)规范要求

产品系列

光电二极管,OSRAM Opto Semiconductors SFH 213 FA-

数据手册

点击此处下载产品Datasheet

产品型号

SFH 213 FA

上升时间

5 ns

下降时间

5 ns

不同nm时的响应度

-

二极管类型

引脚

产品

PIN Photodiodes

产品种类

光电二极管

光电流

90 uA

其它名称

475-3134
Q62702P1671
SFH 213 FA-ND

功率耗散

150 mW

半强度角度

10 deg

反向电压

20 V

响应时间

5ns

响应率

0.59 A/W

商标

OSRAM Opto Semiconductors

噪声等效功率-NEP

2.9E-14 W/sqrt Hz

安装风格

Through Hole

封装/外壳

径向 - 2 引线

封装/箱体

T-1 3/4

峰值波长

900 nm

工作温度

-40°C ~ 100°C

工厂包装数量

1000

暗电流

1 nA

最大工作温度

+ 100 C

最大暗电流

5 nA

最小工作温度

- 40 C

有效面积

1mm²

标准包装

1,000

正向电流

80 mA

波长

900nm

电压-DC反向(Vr)(最大值)

50V

电流-暗(典型值)

1nA

视角

20°

零件号别名

Q62702P1671

频谱范围

750nm ~ 1100nm

颜色-增强

-

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PDF Datasheet 数据手册内容提取

2015-12-23 Silicon PIN Photodiode Version 1.3 SFH 213 FA Features: • Wavelength range (S ) 750 nm to 1100 nm 10% • Short switching time (typ. 5 ns) • 5 mm LED plastic package Applications • High speed photointerrupters • Industrial electronics • For control and drive circuits Ordering Information Type: Photocurrent Ordering Code I [µA] P V = 5 V, λ = 870 nm, E = 1 R e mW/cm2 SFH 213 FA 90 (≥ 65) Q62702P1671 2015-12-23 1

Version 1.3 SFH 213 FA Maximum Ratings (T = 25 °C) A Parameter Symbol Values Unit Operating and storage temperature range T ; T -40 ... 100 °C op stg Reverse voltage V 20 V R Reverse voltage V 50 V R (t < 2 min) Total Power dissipation P 150 mW tot ESD withstand voltage V 2000 V ESD (acc. to ANSI/ ESDA/ JEDEC JS-001 - HBM) Characteristics (T = 25 °C) A Parameter Symbol Values Unit Photocurrent (typ (min)) I 90 (≥ 65) µA P (V = 5 V, λ = 870 nm, E = 1 mW/cm2) R e Wavelength of max. sensitivity (typ) λ 900 nm S max Spectral range of sensitivity (typ) λ (typ) 750 nm 10% ... 1100 Radiant sensitive area (typ) A 1.00 mm2 Dimensions of radiant sensitive area (typ) L x W 1 x 1 mm x mm Half angle (typ) ϕ ± 10 ° Dark current (typ (max)) I 1 (≤ 5) nA R (V = 20 V) R Spectral sensitivity of the chip (typ) S 0.65 A / W λ typ (λ = 870 nm) Quantum yield of the chip (typ) η 0.93 Electro (λ = 870 nm) ns /Photon Open-circuit voltage (typ (min)) V 380 (≥ 300) mV O (E = 0.5 mW/cm2, λ = 870 nm) e Short-circuit current (typ) I 42 µA SC (E = 0.5 mW/cm2, λ = 870 nm) e Rise and fall time (typ) t, t 0.005 µs r f (V = 20 V, R = 50 Ω, λ = 850 nm) R L Forward voltage (typ) V 1.3 V F (I = 100 mA, E = 0) F Capacitance (typ) C 11 pF 0 (V = 0 V, f = 1 MHz, E = 0) R Temperature coefficient of V (typ) TC -2.6 mV / K O V 2015-12-23 2

Version 1.3 SFH 213 FA Parameter Symbol Values Unit Temperature coefficient of I (typ) TC 0.1 % / K SC I (λ = 870 nm) Noise equivalent power (typ) NEP 0.028 pW / (V = 20 V, λ = 870 nm) Hz½ R Detection limit (typ) D* 3.6e12 cm x (V = 20 V, λ = 870 nm) Hz½ / W R Relative Spectral Sensitivity 1) page 8 Photocurrent / Open-Circuit Voltage 1) page 8 100 OHF01773 IP (VR = 5 V) / VO = f(Ee) Srel % 80 60 40 20 0 400 600 800 1000 nm 1200 λ 2015-12-23 3

Version 1.3 SFH 213 FA Power Consumption Dark Current 1) page 8 P = f(T ) I = f(V ), E = 0 tot A R R OHF00394 160 mW P tot 140 120 100 80 60 40 20 0 0 20 40 60 80 ˚C 100 T A Capacitance 1) page 8 Dark Current 1) page 8 C = f(V ), f = 1 MHz, E = 0 I = f(T ), V = 20 V, E = 0 R R A R 2015-12-23 4

Version 1.3 SFH 213 FA Directional Characteristics 1) page 8 S = f(ϕ) rel Package Outline 9.0 (0.354) 8.2 (0.323) 7.8 (0.307) 7.5 (0.295) Area not flat 0.6 (0.024) 1) 9) 5.9 (0.232) 1) 0) 20 18 0.4 (0.016) 0.03 0.02 1 (0. 8 (0. 5.5 (0.217) 100)ng 0.8 ( 0.5 ( ø5. ø4. 0.ci 4 (pa 5s 2. 1.8 (0.071) 5.7 (0.224) 0.6 (0.024) 1.2 (0.047) 5.1 (0.201) 0.4 (0.016) 29 (1.142) Chip position 27 (1.063) Cathode (Diode) Collector (Transistor) GEXY6260 Dimensions in mm (inch). Package 5mm Radial (T 1 ¾), Epoxy 2015-12-23 5

Version 1.3 SFH 213 FA Approximate Weight: 0.4 g Note Packing information is available on the internet (online product catalog). Recommended Solder Pad Dimensions in mm. Note: pad 1: anode 2015-12-23 6

Version 1.3 SFH 213 FA TTW Soldering IEC-61760-1 TTW OHA04645 300 10 s max., max. contact time 5 s per wave ˚C T 250 235 ˚C - 260 ˚C Continuous line: typical process First wave Second wave Dotted line: process limits ∆T< 150 K 200 Cooling Preheating ca. 3.5 K/s typical 150 ca. 2 K/s 130 ˚C ca. 5 K/s 120 ˚C Typical 100 100 ˚C 50 0 0 20 40 60 80 100 120 140 160 180 200 220 s 240 t Disclaimer Language english will prevail in case of any discrepancies or deviations between the two language wordings. Attention please! The information describes the type of component and shall not be considered as assured characteristics. Terms of delivery and rights to change design reserved. Due to technical requirements components may contain dangerous substances. For information on the types in question please contact our Sales Organization. If printed or downloaded, please find the latest version in the Internet. Packing Please use the recycling operators known to you. We can also help you – get in touch with your nearest sales office. By agreement we will take packing material back, if it is sorted. You must bear the costs of transport. For packing material that is returned to us unsorted or which we are not obliged to accept, we shall have to invoice you for any costs incurred. Components used in life-support devices or systems must be expressly authorized for such purpose! Critical components* may only be used in life-support devices** or systems with the express written approval of OSRAM OS. *) A critical component is a component used in a life-support device or system whose failure can reasonably be expected to cause the failure of that life-support device or system, or to affect its safety or the effectiveness of that device or system. **) Life support devices or systems are intended (a) to be implanted in the human body, or (b) to support and/or maintain and sustain human life. If they fail, it is reasonable to assume that the health and the life of the user may be endangered. 2015-12-23 7

Version 1.3 SFH 213 FA Glossary 1) Typical Values: Due to the special conditions of the manufacturing processes of LED, the typical data or calculated correlations of technical parameters can only reflect statistical figures. These do not necessarily correspond to the actual parameters of each single product, which could differ from the typical data and calculated correlations or the typical characteristic line. If requested, e.g. because of technical improvements, these typ. data will be changed without any further notice. 2015-12-23 8

Version 1.3 SFH 213 FA Published by OSRAM Opto Semiconductors GmbH Leibnizstraße 4, D-93055 Regensburg www.osram-os.com © All Rights Reserved. 2015-12-23 9